Xufan’s paper on suppress of defects in 2D materials using isoelectronic doping was just accepted by Advanced Functional Materials — Sep 8, 2016 12:28:44 PM

Significance: This work shows how isoelectronic doping changes the carrier type from n to p in the monolayer MoSe2. These results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in 2D transition metal dichalcogenides. This work was submitted to DOE as a highlight.

Li, X., Lin, M. W., Basile, L., Hus, S. M., Puretzky, A. A., Lee, J., Kuo, Y. C., Chang, L.Y., Wang, K., Idrobo, J. C., Li, A. P., Chen, C. H., Rouleau, C. M., Geohegan,D. B., Xiao, K., Adv. Mater. DOI: 10.1002/adma.201601991(2016)

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